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2SD1153 Dataheets PDF



Part Number 2SD1153
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN TRANSISTOR
Datasheet 2SD1153 Datasheet2SD1153 Datasheet (PDF)

Ordering number:ENN828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications · Relay drivers, hammer drivers, lamp drivers, motor drivers. Features · High DC current gain (4000 or more). · Large current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2006B [2SB865/2SD1153] 6.0 5.0 4.7 0.5 0.6 6.0 3.0 14.0 8.5 0.5 0.5 ( ) : 2SB865 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Ba.

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Ordering number:ENN828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications · Relay drivers, hammer drivers, lamp drivers, motor drivers. Features · High DC current gain (4000 or more). · Large current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2006B [2SB865/2SD1153] 6.0 5.0 4.7 0.5 0.6 6.0 3.0 14.0 8.5 0.5 0.5 ( ) : 2SB865 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage ICBO IEBO hFE1 hFE2 fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=(–)40V, IE=0 VEB=(–)8V, IC=0 VCE=(–)2V, IC=(–)500mA VCE=(–)2V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA IC=(–)500mA, IB=(–)0.5mA IC=(–)500mA, IB=(–)0.5mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 123 1.45 1.45 1 : Emitter 2 : Collector 3 : Base SANYO : MP Ratings (–)80 (–)50 (–)10 (–)1.5 (–)3 900 150 –55 to +150 Unit V V V A A mW ˚C ˚C Ratings min typ 4000 3000 (–)80 (–)50 (–)10 120 (–)0.9 (–)1.5 max (–)0.1 (–)0.1 (–)1.5 (–)2.0 Unit µA µA MHz V V V V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O0303TN (KT)/91098HA (KT)/4027KI/3045MW/D152KI, TS No.828–1/3 Electrical Connection C 2SB865/2SD1153 C B E (2SB865) B E (2SD1153) Collector Current, IC – A DC Current Gain, hFE --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 5 10 7 5 3 2 IC -- VCE --0.08mA --0.06mA --0.04mA --0.02mA 2SB865 IB=0 --2 --4 --6 --8 --10 --12 Collector-to-Emitter Voltage, VCE – V ITR08508 hFE -- IC 2SB865 VCE= --2V 4 10 7 5 3 --0.01 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC – A ITR08510 VCE(sat) -- IC 2SB865 IC / IB=1000 --10 7 5 3 2 --1.0 7 5 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC – A ITR08512 Collector-to-Emitter Saturation Voltage, VCE(sat) – V DC Current Gain, hFE Collector Current, IC – A 0.08mA IC -- VCE 1.6 2SD1153 1.4 1.2 0.06mA 1.0 0.04mA 0.8 0.6 0.02mA 0.4 0.2 0 IB=0 0 2 4 6 8 10 12 Collector-to-Emitter Voltage, VCE – V ITR08509 5 hFE -- IC 10 2SD1153 7 VCE=2V 5 3 2 4 10 7 5 3 0.01 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC – A ITR08511 VCE(sat) -- IC 2SD1153 IC / IB=1000 10 7 5 3 2 1.0 7 5 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC – A ITR08513 No.828–2/3 Collector-to-Emitter Saturation Voltage, VCE(sat) – V Base-to-Emitter Saturation Voltage, VBE(sat) – V Base-to-Emitter Saturation Voltage, VBE(sat) – V 2SB865/2SD1153 VBE(sat) -- IC 3 2SB865 2 IC / IB=1000 VBE(sat) -- IC 3 2SD1153 2 IC / IB=1000 --10 10 77 55 33 22 --1.0 7 5 5 7 --0.01 1000 2 3 5 7 --0.1 2 3 5 Collector Current, IC – A PC -- Ta 7 --1.0 2 ITR08514 2SB865 / 2SD1153 800 600 400 200 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C ITR08516 Collector Current, IC – A 1.0 7 5 5 7 0.01 5 ICP=3A 3 2 IC=1.5A 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC – A ITR08515 ASO 1ms 10ms 1.0 7 5 3 DC 2 0.1 operation 7 5 3 2SB865 / 2SD1153 2 DC single pulse (For PNP, minus sign is omitted.) 0.01 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector-to-Emitter Voltage, VCE – V ITR08517 Collector Dissipation, PC – mW Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should a.


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