TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD1160
Switching Applications Suitable for Motor Drive Appl...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
2SD1160
Switching Applications Suitable for Motor Drive Applications
2SD1160
Unit: mm
High DC current gain Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) Built-in free wheel diode
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 20 V
Emitter-base voltage
VEBO 6 V
Collector current
DC
IC
2 A
Pulse ICP 4
Diode forward surge current (t = 1 s)
IFP
1A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1 W
10
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR ≈ 800 Ω EMITTER
1 2006-11-21
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
...