Transistor
2SD1205, 2SD1205A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
6.9±0.1
0.4
...
Transistor
2SD1205, 2SD1205A
Silicon
NPN epitaxial planer type darlington
For low-frequency amplification
6.9±0.1
0.4
Unit: mm
2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q
1.5
1.5 R0.9 R0.9
q
0.85
0.55±0.1
1.25±0.05
0.45±0.05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1205 2SD1205A 2SD1205 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO
(Ta=25˚C)
3 2 1
Ratings 30 60 25 50 5 750 500 400 150 –55 ~ +150
Unit V
1:Base 2:Collector 3:Emitter
2.5 2.5
emitter voltage 2SD1205A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW ˚C ˚C
EIAJ:SC–71 M Type Mold Package
Internal Connection
C B
≈200Ω
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1205 2SD1205A 2SD1205 2SD1205A
(Ta=25˚C)
Symbol ICBO IEBO VCBO VCEO VEBO hFE*1 VCE(sat) VBE(sat) fT Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = 500mA*2 IC = 500mA, IB = 0.5mA*2 IC = 500mA, IB = 0.5mA*2 VCB = 10V, IE = –50mA, f = 200MHz 150
*2
min
typ
max 100 100
4.1±0.2
q
Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as wel...