2SD1209

2SD1209(K) Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Complementary pair with 2SA1193(K) Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD1209(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 60 60 7 1 2 0.9 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test Symbol V(BR)CBO I CEO I EBO hFE VCE(sat) VBE(sat) Min 60 — — 4000 — — Typ — — — — — — Max — 100 100 — 1.5 2.0 V V Unit V µA µA Test conditions I C = 0.1 mA, IE = 0 VCE = 60 V, RBE = ∞ VEB = 7 V, IC = 0 VCE = 3 V, IC = 0.5 A*1 I C = 500 mA, IB = 0.5 mA*1 I C = 500 mA, IB = 0.5 mA*1 2 2SD1209(K) Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (A) Area of Safe Operation 10 5 iC(peak) PW Ta = 25°C 1 Shot Pulse 0.8 2 1.0 0.5 =1 ms 10 0.4 ms 0.2 0.1 10 20 50 100 1.0 2 5 Collector to Emitter Voltage VCE (V) 0 100 150 50 Ambient Temperature Ta (°C) Typical Output Characteristics 0.5 Ta = 25°C Pulse 16 14 12 10 8 6 DC Current Transfer Ratio vs. ...