2SD1224

2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm · High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 10 1.5 0.15 1.0 10 150 −55 to 150 Unit V V V A A W °C °C Equivalent Circuit BASE COLLECTOR EMITTER JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) 1 2002-07-23 2SD1224 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA Min Typ. Max Unit ― ― 10 µA ― ― 10 µA 30 ― ― V 4000 ― ― ― ― 1.5 V ― ― 2.2 V Turn-on time Switching time Storage time Fall time ton OUTPUT ― 0.18 ― 20 µs IB1 INPUT IB1 15 Ω tstg IB2 IB2 ― 0.6 ― µs VCC ≈ 15 V tf IB1 = −IB2 = 1 mA, DU...