2SD1247

Ordering number:1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications · Power supplies, relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. Package Dimensions unit:mm 2006A [2SB927/2SD1247] ( ) : 2SB927 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common Base Output Capacitance Collector-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VCB=(–)20V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)0.1A VCE=(–)2V, IC=(–)1.5A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz IC=(–)1.5A, IB=(–)75mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)1.5A, IB=(–)75mA * : The 2SB927/2SD1247 are classified by 0.1A hFE as follows : 100 R 200 140 S 280 EIAJ : SC-51 SANYO : MP B : Base C : Collector E : Emitter Ratings (–)30 (–)25 (–)6 (–)2.5 (–)5 1.0 150 –55 to +150 Unit V V V A A W ˚C ˚C 200 T Ratings min typ 100* 65 130 150 19(32) 0.18 (–0.35) 0.85 max (–)0.1 (–)0.1 560* 0.4 (–0.6) 1.2 400 ...