Power Transistors
2SD1249, 2SD1249A
Silicon NPN triple diffusion planar type
For low-freauency power amplification
10.0...
Power
Transistors
2SD1249, 2SD1249A
Silicon
NPN triple diffusion planar type
For low-freauency power amplification
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
s Features
q q
10.5min.
High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 350 400 250 300 5 1.5 0.75 35 1.3 150 –55 to +150 Unit V
1.5max.
2.0
1.1max.
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1249 2SD1249A 2SD1249 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2
emitter voltage 2SD1249A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V
10.0±0.3
6.0±0.3
V A A W
1.5–0.4
2.0
3.0–0.2
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
˚C ˚C
1 2 3
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1249 2SD1249A 2SD1249 2SD1249A 2SD1249 2SD1249A
1:Base 2:Collector 3:Emitter N Type Package (DS)
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 10V, IC = 0....
