2SD1250

Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB928 and 2SB928A 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 10.0±0.3 s Features q q q 1.5±0.1 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 200 200 150 180 6 3 2 30 1.3 150 –55 to +150 Unit V 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1250 2SD1250A 2SD1250 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 6.0±0.3 1.5–0.4 Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 2.0 3.0–0.2 A A W ˚C ˚C 4.4±0.5 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1250 2SD1250A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT * Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 500µA, IE = 0 IC ...