Power Transistors
2SD1250, 2SD1250A
Silicon NPN triple diffusion planar type
For power amplification For TV vartical de...
Power
Transistors
2SD1250, 2SD1250A
Silicon
NPN triple diffusion planar type
For power amplification For TV vartical deflection output Complementary to 2SB0928, 2SB0928A
8.5±0.2 6.0±0.2
Unit: mm
3.4±0.3 1.0±0.1
3.0–+00..24 4.4±0.5
14.4±0.5
10.0±0.3 1.5±0.1
1.5–+00.4
■ Features
High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SD1250
(Base open)
2SD1250A
VCBO VCEO
200 150 180
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO IC ICP PC
Tj Tstg
6 2 3 30 1.3 150 −55 to +150
Unit V V
V A A W
°C °C
4...