2SD1251A

Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type For power amplification 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q 10.5min. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 8 6 4 1 30 1.3 150 –55 to +150 Unit V 10.0±0.3 1.5max. 1.1max. 2.0 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1251 2SD1251A 2SD1251 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 emitter voltage 2SD1251A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V V 8.5±0.2 6.0±0.3 1.5–0.4 A 2.0 3.0–0.2 A W 4.4±0.5 0.8±0.1 2.54±0.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.08±0.5 ˚C ˚C 1 2 3 1:Base 2:Collector 3:Emitter N Type Package (DS) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1251 2SD1251A (TC=25˚C) Symbol ICBO IEBO VCEO(sus)*2 hFE1 hFE2*1 VBE VCE(sat) fT Conditions VCB = 20V, IE = 0 VEB = 8V, IC = 0 IC = 0.2A, L = 25mH VCE = 3V, IC = 0.1A VCE = 3V, IC = 1A VCE = 3V, IC = 1A IC = 2A, IB = 0.4A VCE = 10V, IC = 0.2A, f = 0.5MHz *2V CEO(sus) min typ max 30 1 4.4±0.5 Unit µA ...