Power Transistors
2SD1253, 2SD1253A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2...
Power
Transistors
2SD1253, 2SD1253A
Silicon
NPN triple diffusion planar type
For power amplification Complementary to 2SB930 and 2SB930A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 5 8 4 40 1.3 150 –55 to +150 Unit V
1.5±0.1
1.5max.
10.5min. 2.0
1.1max.
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1253 2SD1253A 2SD1253 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
emitter voltage 2SD1253A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V
14.7±0.5 4.4±0.5 0 to 0.4
1.5–0.4
V A A W ˚C ˚C
10.0±0.3
4.4±0.5
2.0
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
5.08±0.5
1
2
3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1253 2SD1253A 2SD1253 2SD1253A 2SD1253 2SD1253A
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = ...
