2SD1253A

Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB930 and 2SB930A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SD1253 base voltage 2SD1253A VCBO 60 80 V Collector to 2SD1253 emitter voltage 2SD1253A VCEO 60 80 V Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VEBO ICP IC PC 5 8 4 40 1.3 V A A W Junction temperature Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff 2SD1253 current 2SD1253A Collector cutoff 2SD1253 current 2SD1...