Power Transistors
2SD1259, 2SD1259A
Silicon NPN triple diffusion planar type
For power amplification with high forward ...
Power
Transistors
2SD1259, 2SD1259A
Silicon
NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 80 100 60 80 6 6 3 1 40 1.3 150 –55 to +150 Unit V
1.5±0.1
1.5max.
1.1max.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1259 2SD1259A 2SD1259 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
1.5–0.4
Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature
A
2.0
3.0–0.2
A A
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
W
1 2 3
˚C ˚C
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current 2SD1259 2SD1259A
(TC=25˚C)
Symbol ICES ICEO IEBO Conditions VCE = 80V, IE = 0 VCE = 100V, IE = 0 VCE = 40V, IB = 0 VCB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz 50 60 80 500 2500 1 V MHz min typ max 100 100 100 100 Unit µA µA µA V
Collector c...
