Power Transistors
2SB937, 2SB937A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching Co...
Power
Transistors
2SB937, 2SB937A
Silicon
PNP epitaxial planar type Darlington
For power amplification and switching Complementary to 2SD1260 and 2SD1260A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
q q q
High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings –60 –80 –60 –80 –5 –4 –2 35 1.3 150 –55 to +150 Unit V
1.5±0.1
s Features
1.5max.
10.5min. 2.0
1.1max.
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB937 2SB937A 2SB937 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2
emitter voltage 2SB937A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A
2.0 10.0±0.3
6.0±0.3
1.5–0.4
3.0–0.2
A W ˚C ˚C
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
1
2
3
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB937 2SB937A 2SB937 2SB937A 2SB937 2SB937A
1:Base 2:Collector 3:Emitter N Type Package (DS)
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton tstg tf IC = –2A, IB1 = –8mA, IB2 = 8mA
C
Conditions VCB = –60V, IE = 0 VCB = –80V, IE = 0 VC...
