Power Transistors
2SD1261, 2SD1261A
Silicon NPN triple diffusion planar type Darlington
For power amplification Complem...
Power
Transistors
2SD1261, 2SD1261A
Silicon
NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB938 and 2SB938A
10.0±0.3
8.5±0.2 6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
q q q
High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 5 8 4 40 1.3 150 –55 to +150 Unit V
1.5±0.1
s Features
1.5max.
10.5min. 2.0
1.1max.
0.8±0.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1261 2SD1261A 2SD1261 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.3 5.08±0.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2
emitter voltage 2SD1261A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V
10.0±0.3
6.0±0.3
V A A W
1.5–0.4
2.0
3.0–0.2
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
˚C ˚C
1 2 3
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1261 2SD1261A 2SD1261 2SD1261A 2SD1261 2SD1261A
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf
*
1:Base 2:Collector 3:Emitter N Type Package (DS)
Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = ...
