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2SD1263A Dataheets PDF



Part Number 2SD1263A
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD1263A Datasheet2SD1263A Datasheet (PDF)

Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit: mm s q q Features High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 4.2±0.2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 350 400 250 300 5 1.5 0.75 35 2 150 –55 to +150 Unit V 2SD1263 2SD1263A 2SD1263 14.0±0.5 base vo.

  2SD1263A   2SD1263A



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Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit: mm s q q Features High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 4.2±0.2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 350 400 250 300 5 1.5 0.75 35 2 150 –55 to +150 Unit V 2SD1263 2SD1263A 2SD1263 14.0±0.5 base voltage Collector to Solder Dip 4.0 Collector to 16.7±0.3 7.5±0.2 1.3±0.2 emitter voltage 2SD1263A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1263 2SD1263A 2SD1263 2SD1263A 2SD1263 2SD1263A (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A VCE = 10V, IC = 1A IC = 1A, IB = 0.2A VCE = 5V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 0.5 2 0.5 250 300 70 10 1.5 1 V V MHz µs µs µs 250 min typ max 1 1 1 1 1 Unit mA mA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Transistors PC — Ta 50 1.2 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 1.0 2SD1263, 2SD1263A IC — VCE 4.0 VCE=10V IC — VBE Collector power dissipation PC (W) Collector current IC (A) (1) 30 0.8 IB=14mA 12mA 10mA 8mA 6mA Collector current IC (A) 40 3.2 25˚C TC=100˚C –25˚C 2.4 0.6 20 1.6 0.4 4mA 10 (2) (3) (4) 0.2 2mA 0.8 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 10000 10 IC/IB=10 hFE — IC 1000 VCE=10V 300 100 30 10 3 1 0.3 0.1 0.001 0.003 fT — IC VCE=10V f=10MHz TC=25˚C Forward current transfer ratio hFE TC=100˚C 3 1000 300 100 30 10 3 1 0.01 0.03 1 TC=100˚C 25˚C –25˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 10 3 103 Non repetitive pulse TC=25˚C ICP t=1ms IC 0.3 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 10ms DC Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 102 1 10 (2) 1 2SD1263A 2SD1263 10–1 300 1000 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 .


2SD1263 2SD1263A 2SD1264


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