Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
Complementary t...
Power
Transistors
2SD1266, 2SD1266A
Silicon
NPN triple diffusion planar type
For power amplification
Complementary to 2SB941 and 2SB941A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1266
60
VCBO
V
base voltage 2SD1266A
80
Collector to 2SD1266
60
VCEO
V
emitter voltage 2SD1266A
80
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
5
A
Collector current
IC
3
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
35 W
2
Junction temperature Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1266
current
2SD1266A
Collector cutoff
2SD1266
current
2SD1266A
Emitter cutoff current
Collector to emitter 2SD1266
voltage
2SD1266A
Forward current transfer ratio
Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
ICES
ICEO
IEBO
VCEO
hFE1* hFE2 VBE VCE(sat) fT ton tstg tf
VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 10V, IC = 0.5A, f = 10MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC =...