Document
Power Transistors
2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio Complementary to 2SB1299
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 80 100 60 80 6 6 3 1 40 2 150 –55 to +150 Unit V
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1273 2SD1273A 2SD1273 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
1.4±0.1
1.3±0.2
Solder Dip
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.5
emitter voltage 2SD1273A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature
V V A A A W ˚C ˚C
1
2
3
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current 2SD1273 2SD1273A
(TC=25˚C)
Symbol ICBO ICEO IEBO Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VCB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz 50 60 80 500 2500 1 V MHz min typ max 100 100 100 100 Unit µA µA µA V
Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1273 2SD1273A
VCEO hFE* VCE(sat) fT
Forward current transfer ratio Collector to emitter saturation voltage Transition frequency
*h FE
Rank classification
Q P O hFE 500 to 1000 800 to 1500 1200 to 2500
Rank
Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.
1
Power Transistors
PC — Ta
50 1.0 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) IB=1.2mA 1.0mA TC=25˚C
2SD1273, 2SD1273A
IC — VCE
5
IC — VBE
Collector power dissipation PC (W)
Collector current IC (A)
0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 0.2mA 0.2 0.1mA 0
Collector current IC (A)
40
(1)
0.8
4
TC=100˚C 3
30
25˚C 2 –25˚C 1
20
10
(2) (3) (4)
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=40 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100˚C 25˚C –25˚C 10000
hFE — IC
10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03
fT — IC
VCE=12V f=10MHz TC=25˚C
Forward current transfer ratio hFE
1000 –25˚C 25˚C 300 100 30 10 3 1 0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency fT (MHz)
3000
TC=100˚C
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
100 30 103 Non repetitive pulse TC=25˚C
Rth(t) — t
(1) Without heat sink (2) W.