2SD1275

Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type Darlington 0.7±0.1 For power amplification Complementary to 2SB949 and 2SB949A 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm q q 16.7±0.3 q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 60 80 60 80 5 4 2 35 2 150 –55 to +150 Unit V 7.5±0.2 s Features φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1275 2SD1275A 2SD1275 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 –0.1 +0.2 2.54±0.25 5.08±0.5 emitter voltage 2SD1275A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W B 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C ˚C ˚C E s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1275 2SD1275A 2SD1275 2SD1275A 2SD1275 2SD1275A (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf * Conditions VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = –8m...