2SD1275A

Power Transistors 2SB949, 2SB949A Silicon PNP epitaxial planar type Darlington 0.7±0.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm q q 16.7±0.3 q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –4 –2 35 2 150 –55 to +150 Unit V 7.5±0.2 s Features φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB949 2SB949A 2SB949 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 emitter voltage 2SB949A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C B 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB949 2SB949A 2SB949 2SB949A 2SB949 2SB949A E (TC=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf * Conditions VCB = –60V, IE = 0 VCB = –80V, IE = 0 VCB = –30V, IB = 0 VCB = –40V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –2A VCE = –4V, IC = –2A IC = –2A, IB = –8mA VCE = –10V, IC = – 0.5A, f = 1MHz IC = –2A,...