2SD1277A

Power Transistors 2SB951, 2SB951A Silicon PNP epitaxial planar type Darlington 0.7±0.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –7 –12 –8 45 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 14.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB951 2SB951A 2SB951 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 emitter voltage 2SB951A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W B 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C ˚C ˚C E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB951 2SB951A 2SB951 2SB951A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –60V, IE = 0 VCB = –80V, IE = 0 VEB = –7V, IC = 0 IC = –30mA, IB = 0 VCE = –3V, IC = –4A VCE = –3V, IC = –8A IC = –4A, IB = –8mA IC = –4A, IB = –8mA VCE = –10V, IC = –1A, f = 1MHz IC = –4A, IB1 = –8mA, IB2 = 8mA, VCC = –50V 20 0.5 2 1 –60 –80 2000 500 –1.5 –2 V V MHz µs µs µs 10000 m...