2SD1328

Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter 0.65±0.15 Unit: mm 2.8 –0.3 +0.2 1.5 –0.05 +0.25 0.65±0.15 s Features 0.95 q q q Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg 25 20 12 1 0.5 200 150 –55 ~ +150 V V V A A mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 1D s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE*1 VCE(sat) VBE(sat) fT Cob Ron*3 Conditions VCB = 25V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A*2 IC = 0.5A, IB = 20mA*2 IC = 0.5A, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 10 1.0 *2 min typ 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 Parameter Symbol Ratings Unit 1.1 –0.1 max 100 0.16 –0.06 s Absolute Maximum Ratings 2 (Ta=25˚C) +0.2 +0.1 0.4 –0.05 +0.1 Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. 2.9...