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2SD1407A

Toshiba Semiconductor

Silicon NPN Transistor


Description
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A 2SD1407A Power Amplifier Applications Industrial Applications Unit: mm High breakdown voltage: VCEO = 100 V Low collector saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base volt...



Toshiba Semiconductor

2SD1407A

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