2SD1409A

2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1409A High Voltage Switching Applications Industrial Applications Unit: mm High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) Monolithic construction with built-in base-emitter shunt resistor Absolute Maximum Ratings (Ta = 25°C) Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C ymbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 600 400 5 6 1 2.0 25 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA ― SC-67 TOSHIBA 2-10R1A Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 2.5 kΩ ≈ 200 Ω Emitter 1 2009-12-21 http://www.Datasheet4U.com 2SD1409A Electrical Characteristics (Ta = 25°C) Characteristics S Collector cut-off current Emitte...