Document
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD1411A
High-Current Switching Applications Power Amplifier Applications
2SD1411A
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 100 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 7 A
Base current
IB 1 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
30
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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Electrical Characteristics (Tc = 25°C)
2SD1411A
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 100 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1) (Note)
VCE = 1 V, IC = 1 A
hFE (2) VCE (sat)
VCE = 1 V, IC = 4 A IC = 4 A, IB = 0.4 A
VBE (sat) IC = 4 A, IB = 0.4 A
fT VCE = 4 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 5 μA
― ― 5 μA
80 ― ―
V
70 ― 240
30 ― ―
― 0.25 0.5
V
― 0.9 1.4
V
― 10 ― MHz
― 200 ―
pF
Turn-on time
ton
20 μs
Input IB1
Output
―
0.4
―
IB1 IB2
10 Ω
Switching time Storage time
tstg
IB2
Fall time
VCC = 30 V
tf IB1 = −IB2 = 0.3 A, duty cycle ≤ 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
― 2.5 ―
μs
― 0.5 ―
Marking
D1411A
Characteristics indicator
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2 2006-11-21
Collector current IC (A)
IC – VCE
8
160 100
Common emitter
Tc = 25°C
6 80
60 4
40
30 2
IB = 10 mA
0 0 0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE – IC
1.2 Common emitter Tc = 100°C
1.0
0.8 IB = 20 mA
100 200 300 0.6
0.4 400 500
0.2 700 600
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Collector current IC (A)
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
2SD1411A
1.2
1.0
0.8 IB = 30 mA
0.6
0.4
0.2
VCE – IC
Common emitter Tc = 25°C
60 100 150 200 300 400
500 600 700
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Collector current IC (A)
VCE – IC
1.2 Common emitter Tc = −55°C
1.0
0.8 IB = 30 mA
150 200 300 .