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2SD1411A Dataheets PDF



Part Number 2SD1411A
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN Transistor
Datasheet 2SD1411A Datasheet2SD1411A Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications 2SD1411A Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 7 A Base current IB 1 A Collector power dissipation Ta.

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications 2SD1411A Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 7 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.0 W 30 JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-21 Electrical Characteristics (Tc = 25°C) 2SD1411A Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = 100 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 1 V, IC = 1 A hFE (2) VCE (sat) VCE = 1 V, IC = 4 A IC = 4 A, IB = 0.4 A VBE (sat) IC = 4 A, IB = 0.4 A fT VCE = 4 V, IC = 1 A Cob VCB = 10 V, IE = 0, f = 1 MHz Min Typ. Max Unit ― ― 5 μA ― ― 5 μA 80 ― ― V 70 ― 240 30 ― ― ― 0.25 0.5 V ― 0.9 1.4 V ― 10 ― MHz ― 200 ― pF Turn-on time ton 20 μs Input IB1 Output ― 0.4 ― IB1 IB2 10 Ω Switching time Storage time tstg IB2 Fall time VCC = 30 V tf IB1 = −IB2 = 0.3 A, duty cycle ≤ 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 ― 2.5 ― μs ― 0.5 ― Marking D1411A Characteristics indicator Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 Collector current IC (A) IC – VCE 8 160 100 Common emitter Tc = 25°C 6 80 60 4 40 30 2 IB = 10 mA 0 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) VCE – IC 1.2 Common emitter Tc = 100°C 1.0 0.8 IB = 20 mA 100 200 300 0.6 0.4 400 500 0.2 700 600 0 012345678 Collector current IC (A) Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 2SD1411A 1.2 1.0 0.8 IB = 30 mA 0.6 0.4 0.2 VCE – IC Common emitter Tc = 25°C 60 100 150 200 300 400 500 600 700 0 012345678 Collector current IC (A) VCE – IC 1.2 Common emitter Tc = −55°C 1.0 0.8 IB = 30 mA 150 200 300 .


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