2SD1419

2SD1419 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1026 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1419 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 120 100 5 1 2 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 100 5 — 1 Typ — — — — — — — — 140 12 Max — — — 10 200 — 1 1.5 — — Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, IB = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance VCE(sat) VBE fT Cob 60 30 — — — — V V MHz pF Notes: 1. The 2SD1419 is grouped by h FE1 as follows. 2. Pulse test Mark hFE1 DD 60 to 120...