2SD1420

2SD1420 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1420 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 180 120 5 1.5 3 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 180 120 5 — 1 Typ — — — — — — — — Max — — — 10 320 — 1.0 0.9 Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 0.15 A VCE = 5 V, IC = 0.5 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Note: Mark hFE1 EA 60 to 120 VCE(sat) VBE EB 100 to 200 60 30 — — EC V V I C = 0.5 A, IB = 50 mA, Pulse VCE = 5 V, IC = 0.15 A, Pulse 1. The 2SD1420 is grouped by h FE1 as follows. 160 to 320 2 2SD1420 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation Pc (W) (on the alumina ceramic board) Collector Current IC (A) Typical...