2SD1445A

Power Transistors 2SB948, 2SB948A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1445 and 2SD1445A 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q 16.7±0.3 14.0±0.5 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –40 –50 –20 –40 –5 –20 –10 40 2 150 –55 to +150 Unit V s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB948 2SB948A 2SB948 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg emitter voltage 2SB948A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C Solder Dip 4.0 7.5±0.2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB948 2SB948A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = –40V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A IC = –10A, IB = – 0.33A IC = –10A, IB = – 0.33A VCE = –10V, IC = – 0.5A, f = 10MHz VCB = –10V, IE = 0, f = 1MHz IC = –3A, IB1 = – 0.1A, IB2 = 0.1A min typ max –50 –50 Unit µA µA V –20 –40 45 90 260 – 0.6 –1.5 100 400 0.1 0.5 0.1 Forward current transfer ratio Collector ...