2SD1446

Power Transistors 2SD1446 Silicon NPN triple diffusion planar type Darlington For power amplification 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q 4.0 High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 500 400 5 10 6 40 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.0±0.5 0.8±0.1 0.5 –0.1 +0.2 2.54±0.25 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C B s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency E (TC=25˚C) Symbol ICBO VCEO(sus) VEBO hFE VCE(sat) VBE(sat) fT * Conditions VCB = 350V, IE = 0 IC = 2A, L = 10mH IE = 0.1A, IC = 0 VCE = 2V, IC = 2A IC = 3A, IB = 0.06A IC = 3A, IB = 0.06A VCE = 10V, IC = 1A, f = 1MHz min typ max 100 Unit µA V V 400 5 500 1.5 2.5 15 V V MHz *V CEO(sus) Test circuit X L 10mH 50/60Hz mercury relay 120Ω 6V 1Ω...