2SD1458

Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 0.4 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 R0.9 R0.9 0.85 0.55±0.1 0.45±0.05 1.25±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings 20 20 15 1.5 0.7 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package 2.5 2.5 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA* IC = 500mA, IB = 50mA* VCB = 20V, IE = –20mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 55 11 *2 min typ max 1 10 20 20 15 1000 2500 0.4 4.1±0.2 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and m...