Power Transistors
2SD1480
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1052
Uni...
Power
Transistors
2SD1480
Silicon
NPN triple diffusion planar type
For power amplification Complementary to 2SB1052
Unit: mm
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2
s
q q q
Features
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 60 60 6 4 2 25 2 150 –55 to +150 Unit V V V A A W ˚C ˚C
16.7±0.3 14.0±0.5
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Solder Dip
s Absolute Maximum Ratings
4.0
7.5±0.2
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 30V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 0.1A VCE = 4V, IC = 1A VCE = 4V, IC = 1A IC = 2A, IB = 0.2A VCE = 10V, IC = 0.5A, f = 1MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, V...