2SD1480 Transistor Datasheet

2SD1480 Datasheet, PDF, Equivalent


Part Number

2SD1480

Description

Silicon NPN triple diffusion planar type Transistor

Manufacture

Panasonic Semiconductor

Total Page 2 Pages
Datasheet
Download 2SD1480 Datasheet


2SD1480
Power Transistors
2SD1480
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1052
s Features
q High forward current transfer ratio hFE which has satisfactory
linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
60
60
6
4
2
25
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICES
ICEO
IEBO
VCEO
hFE1
hFE2*
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 60V, VBE = 0
VCE = 30V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 0.1A
VCE = 4V, IC = 1A
VCE = 4V, IC = 1A
IC = 2A, IB = 0.2A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 70 to 150 120 to 250
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
200 µA
300 µA
1 mA
60 V
35
70 250
1.2 V
2V
20 MHz
0.2 µs
3.5 µs
0.7 µs
1

2SD1480
Power Transistors
40
35
30
(1)
25
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2.0W)
20
15
(2)
10
(3)
5
(4)
0
0 25 50 75 100 125 150
Ambient temperature Ta (˚C)
IC — VCE
5
TC=25˚C
4
IB=100mA
80mA
3
50mA
40mA
2 30mA
20mA
1 10mA
5mA
1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1480
IC — VBE
6
25˚C
5
TC=100˚C –25˚C
4
VCE=4V
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Base to emitter voltage VBE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3 TC=100˚C
25˚C
1
0.3 –25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
hFE — IC
10000
3000
1000
300
100
TC=100˚C
25˚C
–25˚C
30
10
VCE=4V
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=10V
f=1MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
ICP
3
IC
1
t=10ms
1ms
DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
102 (1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
10
(1)
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2


Features Power Transistors 2SD1480 Silicon NPN t riple diffusion planar type For power a mplification Complementary to 2SB1052 U nit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7 ±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3 0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.2 5 5.08±0.5 1 2 3 4.2±0.2 s q q q Fe atures High forward current transfer ra tio hFE which has satisfactory linearit y Low collector to emitter saturation v oltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 60 60 6 4 2 25 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 14.0±0.5 Parame ter Collector to base voltage Collector to emitter voltage Emitter to base vol tage Peak collector current Collector c urrent Collector power TC=25°C dissipa tion Ta=25°C Junction temperature Stor age temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Solder Dip s Absolu te Maximum Ratings 4.0 7.5±0.2 1:Ba se 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter c.
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