2SD1485 Transistor Datasheet

2SD1485 Datasheet, PDF, Equivalent


Part Number

2SD1485

Description

Silicon NPN triple diffusion planar type Transistor

Manufacture

Panasonic Semiconductor

Total Page 2 Pages
Datasheet
Download 2SD1485 Datasheet


2SD1485
Power Transistors
2SD1485
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1054
s Features
q Extremely satisfactory linearity of the forward current transfer
ratio hFE
q Wide area of safe operation (ASO)
q High transition frequency fT
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
100
100
5
8
5
60
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +155
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE1
hFE2*
hFE3
VBE
VCE(sat)
fT
Cob
Conditions
VCB = 100V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 3A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.3A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
*hFE2 Rank classification
Rank
Q
P
hFE2 60 to 120 100 to 200
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
min typ max Unit
50 µA
50 µA
20
60 200
20
1.8 V
2V
20 MHz
90 pF
1

2SD1485
Power Transistors
80
70
(1)
60
50
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.0W)
40
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
10
TC=25˚C
8
IB=100mA
6
80mA
60mA
4
40mA
2 20mA
10mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1485
IC — VBE
8
VCE=5V
7
25˚C
6 TC=100˚C –25˚C
5
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
25˚C
0.3
TC=100˚C
0.1 –25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
300
100
30
10
hFE — IC
TC=100˚C
25˚C
–25˚C
VCE=5V
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=5V
f=1MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
3 IC
1
0.3
10ms
DC
t=1ms
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
102
(1)
10 (2)
1
10–1
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2


Features Power Transistors 2SD1485 Silicon NPN t riple diffusion planar type For high po wer amplification Complementary to 2SB1 054 Unit: mm q q q q 16.2±0.5 12.5 3.5 Solder Dip Extremely satisfactory linearity of the forward current transf er ratio hFE Wide area of safe operatio n (ASO) High transition frequency fT Fu ll-pack package which can be installed to the heat sink with one screw (TC=25 C) Ratings 100 100 5 8 5 60 3 150 –5 5 to +155 Unit V V V A A W ˚C ˚C 0.7 s Features 15.0±0.3 11.0±0.2 5.0 0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0 .1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0 .1 5.45±0.3 10.9±0.5 1 2 3 s Absolut e Maximum Ratings Parameter Collector t o base voltage Collector to emitter vol tage Emitter to base voltage Peak colle ctor current Collector current Collecto r power TC=25°C dissipation Ta=25°C J unction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tst g 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current.
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