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2SD1508 Dataheets PDF



Part Number 2SD1508
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD1508 Datasheet2SD1508 Datasheet (PDF)

2SD1508 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1508 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base volta.

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2SD1508 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1508 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 30 30 10 1.5 3.0 50 1.2 10 150 −55 to 150 V V V A mA W °C °C JEDEC ― JEITA ― TOSHIBA 2-8H1A Weight: 0.82 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit BASE COLLECTOR EMITTER 1 2006-11-21 Electrical Characteristics (Ta = 25°C) 2SD1508 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA Min Typ. Max Unit ― ― 10 μA ― ― 10 μA 30 ― ― V 4000 ― ― ― ― 1.5 V ― ― 2.2 V Turn-on time Switching time Storage time Fall time ton 20 μs Input IB1 Output ― 0.18 ― IB1 IB2 15 Ω tstg IB2 ― 0.6 ― μs VCC ≈ 15 V tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% ― 0.3 ― Marking Lot No. D1508 A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) 2 2006-11-21 Collector current IC (mA) 600 500 400 300 200 100 0 0 IC – VCE Common emitter Tc = 25°C 60 50 40 30 20 IB = 10 μA 0 1234 56 Collector-emitter voltage VCE (V) 7 600 500 400 300 200 100 0 0 IC – VCE Common emitter Tc = −50°C 160 140 120 100 80 60 40 IB = 20 μA 0 1234 56 7 Collector-emitter voltage VCE (V) Collector current IC (A) Collector current IC (mA) 2SD1508 600 500 400 300 200 100 0 0 IC – VCE Common emitter Tc = 100°C 35 30 25 20 15 10 IB = 5 μA 0 1234 56 Collector-emitter voltage VCE (V) 7 IC – VBE 1.0 Common emitter VCE = 2 V 0.8 0.6 0.4 Tc = 100°C 25 −50 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Base-emitter voltage VBE (V) Collector current IC (mA) DC current gain hFE 100000 50000 30000 10000 5000 3000 hFE – IC Common emitter VCE = 2 V Tc = 100°C 25 −50 1000 500 300 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1 3 Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) – IC 30 Common emitter IC/IB = 1000 10 5 3 Tc = −50°C 1 0.5 100 0.3 25 0.1 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1 3 3 2006-11-21 Base-emitter saturation voltage VBE (sat) (V) 30 10 5 3 Tc = −50°C 1 25 0.5 100 0.3 VBE (sat) – IC Common emitter IC/IB = 1000 0.1 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1 3 Transient thermal resistance rth (°C/W) 2SD1508 rth – tw Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 100 (2) 10 (1) 1 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area 5 3 IC max (pulsed)* 100 μs* IC max (continuous) 1 1 ms* 10 ms* 0.5 DC operation Tc = 25°C 0.3 0.1 0.05 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.03 0.5 1 3 VCEO max 10 30 Collector-emitter voltage VCE (V) 100 Collector current IC (A) 4 2006-11-21 2SD1508 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products sp.


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