Document
2SD1508
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
2SD1508
Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
• High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
30 30 10 1.5 3.0 50 1.2 10 150 −55 to 150
V V V
A
mA
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR
EMITTER
1 2006-11-21
Electrical Characteristics (Ta = 25°C)
2SD1508
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat)
VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 150 mA IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA
Min Typ. Max Unit
― ― 10 μA
― ― 10 μA
30 ― ―
V
4000 ―
―
― ― 1.5 V
― ― 2.2 V
Turn-on time Switching time Storage time
Fall time
ton
20 μs
Input IB1
Output
― 0.18 ―
IB1 IB2 15 Ω
tstg
IB2
― 0.6 ―
μs
VCC ≈ 15 V
tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1%
― 0.3 ―
Marking
Lot No.
D1508
A line indicates
lead (Pb)-free package or lead (Pb)-free finish.
Part No. (or abbreviation code)
2 2006-11-21
Collector current IC (mA)
600 500 400 300 200 100
0 0
IC – VCE
Common emitter Tc = 25°C 60
50
40
30
20 IB = 10 μA
0 1234 56
Collector-emitter voltage VCE (V)
7
600 500 400 300 200 100
0 0
IC – VCE
Common emitter Tc = −50°C 160 140 120
100
80 60
40
IB = 20 μA 0
1234 56 7
Collector-emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (mA)
2SD1508
600 500 400 300 200 100
0 0
IC – VCE
Common emitter Tc = 100°C 35
30
25
20
15
10
IB = 5 μA 0
1234 56
Collector-emitter voltage VCE (V)
7
IC – VBE
1.0 Common emitter VCE = 2 V
0.8
0.6
0.4 Tc = 100°C 25 −50
0.2
0 0 0.4 0.8 1.2 1.6 2.0 2.4
Base-emitter voltage VBE (V)
Collector current IC (mA)
DC current gain hFE
100000 50000 30000
10000 5000 3000
hFE – IC
Common emitter VCE = 2 V
Tc = 100°C 25
−50
1000
500 300
0.003
0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
Collector-emitter saturation voltage VCE (sat) (V)
VCE (sat) – IC
30 Common emitter IC/IB = 1000
10
5
3
Tc = −50°C 1
0.5 100 0.3
25
0.1 0.003
0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
3 2006-11-21
Base-emitter saturation voltage VBE (sat) (V)
30
10
5 3
Tc = −50°C
1 25 0.5 100 0.3
VBE (sat) – IC
Common emitter IC/IB = 1000
0.1 0.003
0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
Transient thermal resistance rth (°C/W)
2SD1508
rth – tw
Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink
100 (2)
10 (1)
1
0.1 0.001
0.01
0.1
1
10 100 1000
Pulse width tw (s)
Safe Operating Area
5
3 IC max (pulsed)*
100 μs*
IC max (continuous)
1 1 ms* 10 ms*
0.5 DC operation Tc = 25°C
0.3
0.1 0.05
*: Single nonrepetitive pulse Tc = 25°C
Curves must be derated linearly with increase in temperature.
0.03 0.5
1
3
VCEO max 10 30
Collector-emitter voltage VCE (V)
100
Collector current IC (A)
4 2006-11-21
2SD1508
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products sp.