Power Transistors
2SD1538, 2SD1538A
Silicon NPN epitaxial planar type
For low-voltage switching Complementary to 2SB107...
Power
Transistors
2SD1538, 2SD1538A
Silicon
NPN epitaxial planar type
For low-voltage switching Complementary to 2SB1070 and 2SB1070A
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
1.5±0.1
1.5max.
1.1max.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 40 50 20 40 5 8 4 25 1.3 150 –55 to +150 Unit V 2SD1538 2SD1538A 2SD1538
5.08±0.5 1 2 3
Collector to base voltage Collector to
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
1.5–0.4
Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
A
2.0
3.0–0.2
A W ˚C ˚C
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
1
2
3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1538 2SD1538A 2SD1538 2SD1538A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A VCE = 5V, IC = 0.5A, f = 10MHz IC =...
