2SD1610

2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD1609 160 160 5 100 1.25 150 –45 to +150 2SD1610 200 200 5 100 1.25 150 –45 to +150 Unit V V V mA W °C °C 2SD1609, 2SD1610 Electrical Characteristics (Ta = 25°C) 2SD1609 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SD1610 Max — — — 10 — 320 — 1.5 2 — — Min 200 200 5 — — 60 30 — — — — Typ — — — — — — — — — 140 3.8 Max — — — — 10 320 — 1.5 2 — — V V MHz pF Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Min 160 160 5 — — Typ — — — — — — — — — 140 3.8 DC current tarnsfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage 60 30 — — — — VCE(sat) Gain bandwidth product f T Collector output capacitance Note: B 60 to 120 Cob 1. The 2SD1609 and 2SD1...