Silicon Transistors. 2SD1624 Datasheet

2SD1624 Datasheet PDF, Equivalent


Part Number

2SD1624

Description

PNP/NPN Epitaxial Planar Silicon Transistors

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
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Download 2SD1624 Datasheet PDF


2SD1624 Datasheet
Ordering number:ENN2019A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1124/2SD1624
High Current Switching Applications
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
· Adoption of FBET, MBIT processes.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Large current capacity and wide ASO.
Package Dimensions
unit:mm
2038A
[2SB1124/2SD1624]
4.5
1.6 1.5
( ) : 2SB1124
Specifications
0.4 0.5
3 1.5 2
3.0
1
0.75
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Mounted on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=()40V, IE=0
Emitter Cutoff Current
IEBO VEB=()4V, IC=0
DC Current Gain
hFE1
hFE2
VCE=()2V, IC=()100mA
VCE=()2V, IC=()3A
Gain-Bandwidth Product
fT VCE=()10V, IC=()50mA
* ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows :
Marking 2SB1124 : BG
Rank
R
S
T
U
2SD1624 : DG
hFE 100 to 200 140 to 280 200 to 400 280 to 560
Ratings
()60
()50
()6
()3
()6
500
1.5
150
55 to +150
Unit
V
V
V
A
A
mW
W
˚C
˚C
Ratings
min typ max
Unit
()1 µA
()1 µA
100*
560*
35
150 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1003TN (KOTO)/92098HA (KT)/3307AT, TS No.2019–1/4

2SD1624 Datasheet
2SB1124/2SD1624
Continued from preceding page.
Parameter
Symbol
Conditions
Output Capacitance
Cob VCB=()10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
VCE(sat) IC=()2A, IB=()100mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=()2A, IB=()100mA
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
ton See specified Test Circuit.
Storage Time
tstg See specified Test Circuit.
Fall Time
tf See specified Test Circuit.
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
RB
IB2
OUTPUT
25
50
++
100µF
470µF
--5V 25V
10IB1= --10IB2=IC=1A
(For PNP, the polarity is reversed.)
Ratings
min typ
(39)
25
(0.35)
0.19
(0.94)
()60
()50
()6
70
(70)
650
(450)
35
(35)
max
(0.7)
0.5
()1.2
Unit
pF
pF
V
V
V
V
V
V
ns
ns
ns
ns
ns
ns
--5.0
2SB1124
--4.5
--4.0
--3.5
--3.0
IC -- VCE
--200mA
--100mA
--50mA
--2.5
--2.0 --20mA
--1.5 --10mA
--1.0 --5mA
--0.5
0
0
--2.0
--1.8
--1.6
--1.4
--1.2
IB=0
--0.4
--0.8
--1.2
--1.6
--2.0
Collector-to-Emitter Voltage, VCE – V ITR08907
IC -- VCE
--14mA
--12mA
--10mA
2SB1124
--8mA
--6mA
--1.0
--4mA
--0.8
--0.6 --2mA
--0.4
--0.2
0
0
IB=0
--2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Collector-to-Emitter Voltage, VCE – V ITR08909
5.0
2SD1624
4.5
4.0
3.5
3.0
2.5
IC -- VCE
100mA
80mA
60mA
40mA
20mA
2.0 10mA
1.5
5mA
1.0
0.5
0 IB=0
0 0.4 0.8 1.2 1.6 2.0
Collector-to-Emitter Voltage, VCE – V ITR08908
IC -- VCE
2.0
8mA 2SD1624
1.8
7mA
1.6
6mA
1.4
1.2 5mA
1.0 4mA
0.8 3mA
0.6 2mA
0.4
1mA
0.2
0 IB=0
0 2 4 6 8 10 12 14 16 18 20
Collector-to-Emitter Voltage, VCE – V ITR08910
No.2019–2/4


Features Datasheet pdf Ordering number:ENN2019A PNP/NPN Epitax ial Planar Silicon Transistors 2SB1124 /2SD1624 High Current Switching Applica tions Applications · Voltage regulator s, relay drivers, lamp drivers, electri cal equipment. Package Dimensions unit :mm 2038A [2SB1124/2SD1624] 4.5 1.6 Fe atures · Adoption of FBET, MBIT proces ses. · Low collector-to-emitter satura tion voltage. · Fast switching speed. · Large current capacity and wide ASO. 0.4 3 1.5 1.5 0.5 2 3.0 0.75 1 1.0 2.5 4.25max 0.4 ( ) : 2SB1124 Speci fications Absolute Maximum Ratings at T a = 25˚C Parameter Collector-to-Base V oltage Collector-to-Emitter Voltage Emi tter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dis sipation Junction Temperature Storage T emperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on ceramic board (2 50mm2×0.8mm) 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) C onditions Ratings (–)60 (–)50 (– )6 (–)3 (–)6 500 1.5 150 –55 to +150 Unit V V V A A mW W ˚C ˚C Electrical .
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