Ordering number:ENN2019A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1124/2SD1624
High Current Switching Applicati...
Ordering number:ENN2019A
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB1124/2SD1624
High Current Switching Applications
Applications
· Voltage
regulators, relay drivers, lamp drivers, electrical equipment.
Package Dimensions
unit:mm 2038A
[2SB1124/2SD1624]
4.5 1.6
Features
· Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Large current capacity and wide ASO.
0.4 3 1.5
1.5
0.5 2 3.0 0.75 1
1.0
2.5 4.25max
0.4
( ) : 2SB1124
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Mounted on ceramic board (250mm2×0.8mm)
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Conditions
Ratings (–)60 (–)50 (–)6 (–)3 (–)6 500 1.5 150 –55 to +150
Unit V V V A A mW W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)3A VCE=(–)10V, IC=(–)50mA 100* 35 150 MHz Conditions Ratings min typ max (–)1 (–)1 560* Unit µA µA
* ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows :
Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 U 280 to 560
Marking 2SB1124 : BG 2SD1624 : DG
Continued...