Medium Power Transistor (32V, 1A)
2SD1664 / 2SD1858
Features 1) Low VCE(sat) = 0.15V(Typ.)
(lC / lB = 500mA / 50mA) 2)...
Medium Power
Transistor (32V, 1A)
2SD1664 / 2SD1858
Features 1) Low VCE(sat) = 0.15V(Typ.)
(lC / lB = 500mA / 50mA) 2) Compliments 2SB1132 / 2SB1237
Structure Epitaxial planar type
NPN silicon
transistor
Dimensions (Unit : mm)
2SD1664
4.5+−00..12 1.6 +− 0.1
1.5−+00..12
2SD1858
6.8 +− 0.2
2.5 +− 0.2
0.5 −+ 0.1
4.4 −+ 0.2
1.0 0.9
4.0 −+ 0.3 2.5−+00..12
1.0 −+ 0.2
(1) (2) (3)
0.4 +− 0.1 1.5 +− 0.1
0.5 +− 0.1 3.0 +− 0.2
0.4 +− 0.1 1.5 +− 0.1
∗Abbreviated symbol: DA
ROHM : MPT3 EIAJ : SC-62
∗ Denotes hFE
0.65Max. 0.4−+00..015
0.5+− 0.1
(1) (2) (3)
2.54 2.54
(1) Base (2) Collector (3) Emitter
ROHM : ATV
14.5 −+0.5
1.05 0.45 +− 0.1
(1) Emitter (2) Collector (3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
Collector current
Collector
2SD1664
power dissipation
2SD1858
Ju...
