2SD1669

Ordering number:2092B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1136/2SD1669 50V/12A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other genral high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Wide ASO leading to high resistance to breakdown. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1136/2SD1669] ( ) : 2SB1136 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT VCE(sat) VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)5A VCE=(–)5V, IC=(–)1A IC=(–)6A, IB=(–)0.6A * : The 2SB1136/2SD1669 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Ratings (–)60 (–)50 (–)6 (–)12 (–)15 2 30 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ 70* 30 10 max (–)0.1 (–)0.1 280* (–)0.4 Unit mA mA MHz V Any and all SANYO products described o...