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2SD1682 Dataheets PDF



Part Number 2SD1682
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet 2SD1682 Datasheet2SD1682 Datasheet (PDF)

Ordering number:2060A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1142/2SD1682 50V/2.5A High-Speed Switching Applications Applications · Power supplies, relay drivers, lamp drivers. Package Dimensions unit:mm 2042A [2SB1142/2SD1682] Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. ( ) : 2SB1142 B : Base C : Collector E : Emitter SANYO : TO-126ML Conditions Ratings (–)60 (–)50 (–)6 (–)2.5 (–)5.0 1.5 Unit V V V A A W W Specifi.

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Ordering number:2060A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1142/2SD1682 50V/2.5A High-Speed Switching Applications Applications · Power supplies, relay drivers, lamp drivers. Package Dimensions unit:mm 2042A [2SB1142/2SD1682] Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. ( ) : 2SB1142 B : Base C : Collector E : Emitter SANYO : TO-126ML Conditions Ratings (–)60 (–)50 (–)6 (–)2.5 (–)5.0 1.5 Unit V V V A A W W Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C Tj Tstg 10 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 Gain-Bandwidth Product fT VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)2A VCE=(–)10V, IC=(–)50mA 100 100 R R 200 200 140 140 S S 280 280 200 200 T T Conditions Ratings min typ max (–)100 (–)100 (100)* 100* 35 140 400 400 280 U Unit nA nA (400)* 560 MHz * : The 2SB1142/2SD1682 are classified by 100mA hFE as follows : 2SB1142 2SD1682 560 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92098HA (KT)/D151MH, (KOTO) No.2060–1/4 Free Datasheet http://www.Datasheet4U.com 2SB1142/2SD1682 Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) Cob Conditions IC=(–)1A, IB=(–)50mA IC=(–)1A, IB=(–)50mA VCB=(–)10V, f=1MHz (–)60 (–)50 (–)6 (35)35 (350) 550 tf See specified Test Circuit (30)30 Ratings min typ (–250) 110 (–)0.85 (25)16 max (–500) 300 (–)1.2 Unit mV mV V pF V V V ns ns ns ns V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 ton tstg See specified Test Circuit See speci.


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