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2SD1724 Dataheets PDF



Part Number 2SD1724
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet 2SD1724 Datasheet2SD1724 Datasheet (PDF)

Ordering number:ENN2047A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1167/2SD1724 100V/3A Switching Applications Features · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switching time. Package Dimensions unit:mm 2043B [2SB1167/2SD1724] 8.0 4.0 2.0 2.7 1.5 9.0 11.0 1.6 0.8 3.0 15.5 0.8 0.6 0.5 ( ) : 2SB1167 Specifications 12 3 2.4 4.8 1.2 1 : Emitter 2 : Collector 3 : B.

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Ordering number:ENN2047A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1167/2SD1724 100V/3A Switching Applications Features · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switching time. Package Dimensions unit:mm 2043B [2SB1167/2SD1724] 8.0 4.0 2.0 2.7 1.5 9.0 11.0 1.6 0.8 3.0 15.5 0.8 0.6 0.5 ( ) : 2SB1167 Specifications 12 3 2.4 4.8 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126LP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Ratings (–)120 (–)100 (–)6 (–)3 (–)6 1.2 20 150 –55 to +150 Unit V V V A A W W ˚C ˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE1 hFE2 VCB=(–)100V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)0.5A VCE=(–)5V, IC=(–)2A Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)0.5A * : The 2SB1167/2SD1724 are classified by 0.5A hFE as follows : Rank hFE Q 70 to 140 R 100 to 200 Ratings min typ max Unit (–)1 µA (–)1 µA 70* 400* 40 (130) MHz 180 MHz Continued on next page. ST 140 to 280 200 to 400 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 10904TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2047–1/4 2SB1167/2SD1724 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Symbol Conditions Cob VCB=(–)10V, f=1MHz VCE(sat) IC=(–)1.5A, IB=(–)0.15A VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)1.5A, IB=(–)0.15A IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 ton See specified Test Circuit Storage Time Fall Time Switching Time Test Circuit PW=20µs D.C.≤1% IB1 IB2 INPUT VR RB tstg See specified Test Circuit tf See specified Test Circuit OUTPUT RL 50Ω ++ 100µF 470µF VBE= --5V VCC=25V IC=10IB1= --10IB2=1.5A (For PNP, the polarity is reversed.) Ratings min typ 25(40) (–200) 150 (–)0.9 (–)120 (–)100 (–)6 (100) 100 900 (800) 50(50) max (–500) 400 (–)1.2 Unit pF mV mV V V V V ns ns ns ns ns Collector Current, IC – A --2.0 2SB1167 From top --20mA --1.6 --18mA --16mA --1.2 --0.8 IC -- VCE --14mA --12mA --10mA --8mA --6mA --4mA --2mA --0.4 0 0 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 IB=0 --1 --2 --3 --4 --5 Collector-to-Emitter Voltage, VCE – V ITR09112 IC -- VCE 2SB1167 --4.-0-3m.5AmA --3.0mA --2.5mA --2.0mA --1.5mA --1.0mA --0.5mA IB=0 --10 --20 --30 --40 --50 Collector-to-Emitter Voltage, VCE – V ITR09114 Collector Current, IC – A Collector Current, IC – A 2.0 2SD1724 From top 20mA 1.6 18mA 16mA 14mA 1.2 IC -- VCE 12mA 10mA 8mA 6mA 0.8 4mA 0.4 2mA 0 IB=0 012345 Collector-to-Emitter Voltage, VCE – V ITR09113 IC -- VCE 1.0 5.0mA4.5mA 2SD1724 0.8 4.0mA 3.5mA 0.6 3.0mA 2.5mA 2.0mA 0.4 1.5mA 1.0mA 0.2 0.5mA 0 IB=0 0 10 20 30 40 50 Collector-to-Emitter Voltage, VCE – V ITR09115 No.2047–2/4 Collector Current, IC – A 2SB1167/2SD1724 IC -- VBE IC -- VBE --3.5 3.5 2SB1167 2SD1724 VCE= --5V --3.0 3.0 VCE=5V Collector Current, IC – A Collector Current, IC – A --2.5 2.5 --2.0 2.0 --1.5 1.5 Ta=75°C 25°C --25°C Ta=75°C 25°C --25°C --1.0 1.0 DC Current Gain, hFE Gain-Bandwidth Product, fT – MHz --0.5 0 0 1000 5 3 2 100 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE – V ITR09116 hFE -- IC 2SB1167 VCE= --5V Ta=75°C 25°C --25°C 5 3 2 10 5 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 Collector Current, IC – A ITR09118 fT -- IC 5 2SB1167 / 2SD1724 3 VCE=10V 2 2SD1724 2SB1167 100 7 5 3 2 10 23 5 3 2 --1000 (For PNP, minus sign is omitted.) 5 7 0.1 23 5 7 1.0 23 Collector Current, IC – A ITR09120 VCE(sat) -- IC 2SB1167 IC / IB=10 5 3 2 --100 5 3 2 25°C Ta=75°C --25°C --10 5 --0.01 .


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