2SD1741

Power Transistors 2SD1741, 2SD1741A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1171 and 2SB1171A 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm 7.2±0.3 0.8±0.2 1.0±0.2 q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 200 200 150 180 6 3 2 15 1.3 150 –55 to +150 Unit V 10.0 –0. +0.3 s Features 1.1±0.1 0.75±0.1 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1741 2SD1741A 2SD1741 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 3.0±0.2 10.2±0.3 7.2±0.3 1.0 max. emitter voltage 2SD1741A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature 2.5 V A A W ˚C ˚C 1.1±0.1 1 2 3 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 2.3±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1741 2SD1741A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT * Conditions VCB = 200V, IE = 0 V...