Power Transistors
2SD1741, 2SD1741A
Silicon NPN triple diffusion planar type
For power amplification For TV vertical de...
Power
Transistors
2SD1741, 2SD1741A
Silicon
NPN triple diffusion planar type
For power amplification For TV vertical deflection output Complementary to 2SB1171 and 2SB1171A
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
7.2±0.3
0.8±0.2
1.0±0.2
q
q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 200 200 150 180 6 3 2 15 1.3 150 –55 to +150 Unit V
10.0 –0.
+0.3
s Features
1.1±0.1 0.75±0.1
0.85±0.1 0.4±0.1
2.3±0.2 4.6±0.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1741 2SD1741A 2SD1741 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2 2.0±0.2
7.0±0.3
Unit: mm
0 to 0.15
3.0±0.2
10.2±0.3 7.2±0.3 1.0 max.
emitter voltage 2SD1741A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
2.5
V A A W ˚C ˚C
1.1±0.1 1 2 3
0.75±0.1
0.5 max.
0.9±0.1 0 to 0.15
2.3±0.2 4.6±0.4
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1741 2SD1741A
(TC=25˚C)
Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT
*
Conditions VCB = 200V, IE = 0 V...