Power Transistors
2SD1743, 2SD1743A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2...
Power
Transistors
2SD1743, 2SD1743A
Silicon
NPN triple diffusion planar type
For power amplification Complementary to 2SB1173 and 2SB1173A
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 5 8 4 15 1.3 150 –55 to +150 Unit V
7.2±0.3
0.8±0.2
1.1±0.1
1.0±0.2 10.0 –0.
+0.3
0.85±0.1 0.4±0.1
0.75±0.1
2.3±0.2 4.6±0.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1743 2SD1743A 2SD1743 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2 2.0±0.2
7.0±0.3
Unit: mm
0 to 0.15
emitter voltage 2SD1743A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V
10.2±0.3 7.2±0.3
V A A W ˚C ˚C
3.0±0.2
1.0 max.
2.5
1.1±0.1
0.75±0.1
0.5 max.
0.9±0.1 0 to 0.15
1
2
3
2.3±0.2 4.6±0.4
s
Electrical Characteristics (TC=25˚C)
Parameter Symbol ICES ICEO IEBO 2SD1743 2SD1743A VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 4A, IB = 0.4A VCE = 10V, IC = 0.5...