Power Transistors
2SD1744
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB1174
7.0±0.3 3.0±0....
Power
Transistors
2SD1744
Silicon
NPN epitaxial planar type
For power switching Complementary to 2SB1174
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
s Features
q q q q
7.2±0.3
0.8±0.2
1.1±0.1
0.85±0.1 0.4±0.1
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 130 80 7 6 3 15 1.3 150 –55 to +150 Unit V V
1.0±0.2
10.0 –0.
+0.3
0.75±0.1
2.3±0.2 4.6±0.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2 2.0±0.2
7.0±0.3
Unit: mm
0 to 0.15
3.0±0.2
10.2±0.3 7.2±0.3
V A A
1.0 max.
2.5
1.1±0.1
0.75±0.1
0.5 max.
0.9±0.1 0 to 0.15
W
1 2 3
˚C ˚C
2.3±0.2 4.6±0.4
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tst...
