Power Transistors
2SD1748, 2SD1748A
Silicon NPN triple diffusion planar type Darlington
For low-freauency power amplifi...
Power
Transistors
2SD1748, 2SD1748A
Silicon
NPN triple diffusion planar type Darlington
For low-freauency power amplification Complementary to 2SB1178 and 2SB1178A
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
s Features
q q q
High foward current transfer ratio hFE High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
7.2±0.3
0.8±0.2
1.1±0.1
0.85±0.1 0.4±0.1
1.0±0.2
10.0 –0.
+0.3
0.75±0.1
2.3±0.2 4.6±0.4
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 5 4 2 15 1.3 150 –55 to +150 Unit V
1
2
3
Collector to base voltage Collector to
2SD1748 2SD1748A 2SD1748
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2 2.0±0.2
7.0±0.3
Unit: mm
0 to 0.15
emitter voltage 2SD1748A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
4.6±0.4 2.3±0.2 1.1±0.1 3.0±0.2
10.2±0.3
7.2±0.3
1.0 max.
2.5
0.75±0.1
0.5 max.
0.9±0.1 0 to 0.15
1
2
3
s
Electrical Characteristics (TC=25˚C)
Parameter Symbol ICBO ICEO IEBO 2SD1748 2SD1748A VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf
*
1:Base 2:Collector 3:Emitter I Type Package (Y)
Conditions VCB = 60V, IE = 0 VCB = 80V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = ...