Power Transistor (50V, 3A)
2SD1760 / 2SD1864
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) C...
Power
Transistor (50V, 3A)
2SD1760 / 2SD1864
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243.
Structure Epitaxial planar type
NPN silicon
transistor
Dimensions (Unit : mm)
2SD1760
6.5±0.2
5.1
+0.2 −0.1
C0.5
2.3
+0.2 −0.1
0.5±0.1
2SD1864
6.8±0.2
2.5±0.2
1.5±0.3
4.4±0.2
1.0 0.9
1.5 2.5
9.5±0.5
+0.3 −0.1
0.9
5.5
0.75 0.9
0.65±0.1
2.3±0.2 2.3±0.2
(1) (2) (3)
ROHM : CPT3 EIAJ : SC-63
0.55±0.1 1.0±0.2
(1) Base (2) Collector (3) Emitter
0.65Max.
14.5±0.5
0.5±0.1 (1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter (2) Collector (3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
Collector power 2SD1760
dissipation
2SD1864
IC PC
3 A (DC) 4.5 A (Pulse) ∗1 15 W (Tc=25°C)∗2
1W
Junction temperature
Tj 15...
