2SD1767 / 2SD1859
Transistors
Medium power transistor (80V, 0.7A)
2SD1767 / 2SD1859
!Features 1) High breakdown voltage...
2SD1767 / 2SD1859
Transistors
Medium power
transistor (80V, 0.7A)
2SD1767 / 2SD1859
!Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. !External dimensions (Units : mm)
2SD1767
4.0 1.0 2.5 0.5
1.5 0.4
(1)
3.0
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SD1767 2SD1859 Tj Tstg Symbol VCBO VCEO VEBO IC Limits 80 80 5 0.7 1 0.5 PC 2 1 150 −55~+150 °C °C W
∗2 ∗3
0.5
(3)
V A(DC) A(Pulse)
∗1
0.4
V V
ROHM : MPT3 EIAJ : SC-62
(1) Base (2) Collector (3) Emitter
2SD1859
6.8 2.5
∗1 Pw=10ms, duty=1/2 ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
0.5 (1) (2) (3) 2.54 2.54
Type Package hFE Marking Code Basic ordering unit (pieces)
2SD1767 MPT3 PQR
2SD1859 ATV QR − TV2 2500
∗Denotes h
DC∗ T100 1000
1.05
14.5
!Packaging specifications and hFE
0.65Max.
1.0
0.9
4.4
1.5
0.45
Unit
1.5 0.4
Taping specifications
FE
ROHM : ATV
(1) Emitter (2) Collector (3) Base
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage 2SD1767 2SD1859 Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 80 80 5 ...
