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2SD1768S Dataheets PDF



Part Number 2SD1768S
Manufacturers Rohm
Logo Rohm
Description Power Transistor
Datasheet 2SD1768S Datasheet2SD1768S Datasheet (PDF)

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 Structure Epitaxial planer type NPN silicon transistor Dimensions (Unit : mm) 2SD1898 4.5+−00..21 1.6±0.1 1.5−+00..12 0.5±0.1 4.0±0.3 2.5+−00..21 ROHM : MPT3 EIAJ : SC-62 2SD1733 6.5±0.2 5.1+−00..21 C0.5 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0..

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Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 Structure Epitaxial planer type NPN silicon transistor Dimensions (Unit : mm) 2SD1898 4.5+−00..21 1.6±0.1 1.5−+00..12 0.5±0.1 4.0±0.3 2.5+−00..21 ROHM : MPT3 EIAJ : SC-62 2SD1733 6.5±0.2 5.1+−00..21 C0.5 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4−+00..015 Abbreviated symbol : DF 2SD1768S 2.3+−00..21 0.5±0.1 3±0.2 4±0.2 (1) Base (2) Collector (3) Emitter 2±0.2 3Min. 5.5+−00..31 1.5±0.3 0.9 (15Min.) 1.5 2.5 9.5±0.5 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 (1) (2) (3) 0.55±0.1 1.0±0.2 ROHM : CPT3 EIAJ : SC-63 2SD1863 6.8±0.2 (1) Base (2) Collector (3) Emitter 2.5±0.2 0.45+−00..1055 2.5+−00..41 5 0.5 0.45−+00..0155 (1) (2) (3) Taping specifications ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base 4.4±0.2 1.0 0.9 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.C 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO 120 Collector-emitter voltage VCEO 80 Emitter-base voltage VEBO 5 Collector current 1 IC 2 2SD1898 0.5 2 Collector power dissipation 2SD1733 PC 1 10 2SD1768S 0.3 2SD1863 1 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Pw=20ms, duty=1 / 2 ∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger. ∗3 When mounted on a 40×40×0.7mm ceramic board. Unit V V V A (DC) A (Pulse) ∗1 W W ∗3 W W (Tc=25°C) W W ∗2 °C °C Electrical characteristics (Ta=25C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVCEO BVEBO ICBO IEBO DC current transfer ratio 2SD1863 2SD1733, 2SD1898 2SD1768S ∗ hFE Collector-emitter saturation voltage VCE(sat) Transition frequency fT Output capacitance ∗ Measured using pulse current Cob Min. 120 80 5 − − 120 120 120 − − − Typ. − − − − − − − − 0.15 100 20 Max. − − − 1 1 390 390 390 0.4 − − Unit V V V μA μA − − − V MHz pF Conditions IC=50μA IC=1mA IE=50μA VCB=100V VEB=4V VCE=3V, IC=0.5A IC/IB=500mA/20mA VCE=10V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz Packaging specifications and hFE Type 2SD1898 2SD1733 2SD1768S Package Code hFE Basic ordering unit (pieces) QR QR QR 2SD1863 QR T100 1000 − − − Taping TL TP 2500 5000 −− − − −− TV2 2500 − − − hFE values are classified as follows : Item hFE QR 120 to 270 180 to 390 Data Sheet www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.C 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Electrical characteristic curves 1000 Ta=25°C VCE=5V 100 COLLECTOR CURRENT : IC (mA) 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC (A) Ta=25°C 1.0 6mA 5mA 0.8 4mA 3mA 0.6 2mA 0.4 1mA 0.2 0 IB=0mA 0 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25°C 2.0 1.0 0.5 0.2 0.1 0.05 IC/IB=20/1 10/1 0.02 0.01 0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) Ta=25°C 500 VCE=5V 200 100 50 20 10 5 2 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : −IE (mA) Fig.5 Gain bandwidth product vs. emitter current COLLECTOR CURRENT : IC (A) Pw=P1w0=m10S0mS Pw=P1w0m=1S00mS 10 5 2 Ic Max (Pulse) 1 DC 500m 200m 100m 50m Ta=25°C Single non-repetitive pulse 20m 10m 5m 2m 1m 0.1 0.2 0.5 1 2 5 10 20 50100 2005001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Safe operating area (2SD1863) COLLECTOR CURRENT : IC (A) 10 5 2 1 500m Ic Max (Pulse) DC 200m 100m 50m Ta=25°C Single non-repetitive pulse 20m 10m 5m 2m 1m 0.1 0.2 0.5 1 2 5 10 20 50100200 5001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operating area (2SD1898) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Data Sheet DC CURRENT GAIN : hFE 1000 100 Ta=25°C VCE=3V 1V 0 0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current 1000 100 Ta=25°C f=1MHz IE=0A Ic=0A 10 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.12 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd..


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