Document
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 /
2SB1241 / 2SB1181
Structure Epitaxial planer type NPN silicon transistor
Dimensions (Unit : mm)
2SD1898
4.5+−00..21 1.6±0.1
1.5−+00..12
0.5±0.1
4.0±0.3 2.5+−00..21
ROHM : MPT3 EIAJ : SC-62
2SD1733
6.5±0.2 5.1+−00..21
C0.5
1.0±0.2
(1) (2) (3)
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
0.4±0.1 1.5±0.1
0.4−+00..015
Abbreviated symbol : DF
2SD1768S
2.3+−00..21 0.5±0.1
3±0.2
4±0.2
(1) Base (2) Collector (3) Emitter
2±0.2
3Min.
5.5+−00..31 1.5±0.3 0.9
(15Min.)
1.5 2.5
9.5±0.5
0.75 0.9
0.65±0.1
2.3±0.2 2.3±0.2
(1) (2) (3)
0.55±0.1 1.0±0.2
ROHM : CPT3 EIAJ : SC-63
2SD1863
6.8±0.2
(1) Base (2) Collector (3) Emitter
2.5±0.2
0.45+−00..1055
2.5+−00..41 5
0.5 0.45−+00..0155
(1) (2) (3)
Taping specifications
ROHM : SPT EIAJ : SC-72
(1) Emitter (2) Collector (3) Base
4.4±0.2
1.0 0.9
0.65Max.
14.5±0.5
0.5±0.1 (1) (2) (3)
2.54 2.54
1.05
0.45±0.1
Taping specifications
ROHM : ATV
(1) Emitter (2) Collector (3) Base
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1/3
2009.12 - Rev.C
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
120
Collector-emitter voltage
VCEO
80
Emitter-base voltage
VEBO
5
Collector current
1 IC
2
2SD1898
0.5 2
Collector power dissipation
2SD1733
PC
1 10
2SD1768S
0.3
2SD1863
1
Junction temperature
Tj 150
Storage temperature
Tstg
−55 to +150
∗1 Pw=20ms, duty=1 / 2 ∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger. ∗3 When mounted on a 40×40×0.7mm ceramic board.
Unit V V V
A (DC) A (Pulse) ∗1
W W ∗3 W W (Tc=25°C) W W ∗2 °C °C
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current
BVCEO BVEBO
ICBO IEBO
DC current transfer ratio
2SD1863 2SD1733, 2SD1898 2SD1768S
∗ hFE
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Output capacitance
∗ Measured using pulse current
Cob
Min. 120 80
5 − − 120 120 120 − − −
Typ. − − − − − − − −
0.15 100 20
Max. − − − 1 1
390 390 390 0.4
− −
Unit V V V μA μA − − − V
MHz pF
Conditions IC=50μA IC=1mA IE=50μA VCB=100V VEB=4V
VCE=3V, IC=0.5A
IC/IB=500mA/20mA VCE=10V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz
Packaging specifications and hFE
Type 2SD1898 2SD1733 2SD1768S
Package Code hFE Basic ordering unit (pieces) QR QR QR
2SD1863 QR
T100 1000
− − −
Taping TL TP 2500 5000 −−
− − −−
TV2 2500
− − −
hFE values are classified as follows :
Item hFE
QR 120 to 270 180 to 390
Data Sheet
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2/3
2009.12 - Rev.C
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Electrical characteristic curves
1000
Ta=25°C VCE=5V
100
COLLECTOR CURRENT : IC (mA)
10
1
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation characteristics
COLLECTOR CURRENT : IC (A)
Ta=25°C
1.0 6mA 5mA
0.8 4mA
3mA 0.6
2mA 0.4
1mA 0.2
0 IB=0mA 0 2 4 6 8 10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Ta=25°C
2.0 1.0 0.5
0.2 0.1 0.05
IC/IB=20/1 10/1
0.02
0.01 0
10 100 1000 COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage vs. collector current
TRANSITION FREQUENCY : fT (MHz)
Ta=25°C 500 VCE=5V
200 100
50
20 10
5
2
1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : −IE (mA)
Fig.5 Gain bandwidth product vs. emitter current
COLLECTOR CURRENT : IC (A)
Pw=P1w0=m10S0mS Pw=P1w0m=1S00mS
10 5 2 Ic Max (Pulse) 1 DC
500m
200m 100m
50m
Ta=25°C Single non-repetitive pulse
20m 10m
5m
2m 1m
0.1 0.2 0.5 1 2
5 10 20 50100 2005001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Safe operating area (2SD1863)
COLLECTOR CURRENT : IC (A)
10 5
2 1 500m
Ic Max (Pulse) DC
200m 100m
50m
Ta=25°C Single non-repetitive pulse
20m 10m
5m
2m 1m
0.1 0.2 0.5 1 2
5 10 20 50100200 5001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area (2SD1898)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
Data Sheet
DC CURRENT GAIN : hFE
1000 100
Ta=25°C
VCE=3V 1V
0 0 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current
1000 100
Ta=25°C f=1MHz
IE=0A Ic=0A
10
1 0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
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3/3
2009.12 - Rev.C
Notice
Notes
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