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2SD1769 Dataheets PDF



Part Number 2SD1769
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon NPN Transistor
Datasheet 2SD1769 Datasheet2SD1769 Datasheet (PDF)

Darlington 2SD1769 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz 2SD1769 10max 20max 120min 2000min 1.5max 2.0max 100typ typ Equivalent circuit B C (2.5k Ω)(200 Ω) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD1769 120 120 6 6(Pulse10) 1 50(Tc=25°C) 150 –55 to +150 U.

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Darlington 2SD1769 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz 2SD1769 10max 20max 120min 2000min 1.5max 2.0max 100typ typ Equivalent circuit B C (2.5k Ω)(200 Ω) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD1769 120 120 6 6(Pulse10) 1 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose (Ta=25°C) Unit External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 µA mA V V MHz pF 2.5 12.0min 4.0max 16.0±0.7 8.8±0.2 a b ø3.75±0.2 V 1.35 0.65 +0.2 -0.1 2.5 B C E 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –1.5 IB1 (mA) 3 IB2 (mA) –3 ton (µs) 0.5typ tstg (µs) 5.5typ tf (µs) 1.5typ Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) A 5m A mA V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) (V CE =2V) 8 8 20 10 m 3 m 2mA 1 .5 m A A Collector Current I C (A) 0 .7 m A 2 Tem mp) e Te 4 A 0 .5 m 0 .4 m A Collector Current I C (A) 6 1mA 6 4 p) 125 25˚C 2 2 I B =0.3mA 0 0 2 4 6 0 0.3 1 5 10 50 100 0 0 1 Base-Emittor Voltage V B E (V) –30˚C (Case 1 ˚C (Cas 2A (Ca 4A se I C =6 A Temp ) 2 Collector-Emi tter Voltage V C E (V) Base Current I B (mA) h FE – I C Characteristics (Typical) (V C E =2V) 10000 DC Curr ent Gain h F E 5000 Typ h FE – I C Temperature Characteristics (Typical) (V C E =2V) 10000 5000 D C Cur r ent Gai n h FE θ j - a (˚C /W) θ j-a – t Characteristics 10 5 12 1000 500 1000 500 –3 0˚ C Transient Thermal Resistance 5˚C ˚C 25 1 0.5 100 50 30 0.03 0.05 0.1 80 0.03 0.1 0.5 1 5 10 0.5 1 5 10 0.2 1 5 10 50 100 Time t(ms) 1000 5000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 120 20 Safe Operating Area (Single Pulse) 50 P c – T a Derating 100 Cu t-of f Fr eque ncy f T (MH Z ) Ma xim um Powe r Dissipation P C (W) Typ 10 10 D 500 µs s 1m s 3m ms 40 W ith 5 Collector Curre nt I C ( A) C In fin 30 ite he at si 1 0.5 Without Heatsink Natural Cooling nk 50 20 10 Without Heatsink 0 25 50 75 100 125 150 0 –0.05 –0.5 –1 –5 –8 Emitter Current I E (A) 0.08 3 5 10 50 100 200 2 0 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 136 .


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