2SD1773

Power Transistors 2SD1773 Silicon NPN triple diffusion planar type Darlington For midium speed switching Complementary to 2SB1193 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 7.5±0.2 s Features q q q 0.7±0.1 4.2±0.2 Unit: mm 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 120 120 7 12 8 50 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.0±0.5 0.8±0.1 0.5 –0.1 +0.2 2.54±0.25 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 3 Internal Connection C B s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage E (TC=25˚C) Symbol ICBO ICEO VCEO(sus) VEBO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = 120V, IE = 0 VCE = 100V, IB = 0 IC = 2A, L = 10mH IE = 50mA, IC = 0 VCE = 3V, IC = 4A IC = 4A, IB = 8mA IC = 8A, IB = 80mA IC = 4A, IB = 8mA IC = 8A, IB = 80mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 4A, IB1 = 8mA, IB2 = –8mA, VCC = 50V 20 0.7 6 2 120 7 1000 20000 1.5 3 2 3.5 V V V ...